TABLE 1.Input resistance (RN) and action potential (AP) parameters
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| RT | 32–34°C | Q10 | |
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| RMP, mV | –71 ± 5 (17) | –72 ± 3 (19) | 1.03 ± 0.08 |
| RN, MΩ | 389 ± 151 (18) * | 254 ± 96 (16) | 0.60 ± 0.33 |
| AP threshold, mV | –39 ± 4 (20) | –38 ± 4 (20) | 0.98 ± 0.18 |
| AP amplitude, mV | 90 ± 11 (20) | 76 ± 8 (20) | 0.84 ± 0.15 |
| AP 1/2 width, ms | 2.7 ± 0.4 (20)* | 1.4 ± 0.3 (20) | 0.45 ± 0.1 |
| AP base width, ms | 5.25 ± 1.1 (20) * | 2.9 ± 0.7 (20) | 0.5 ± 0.19 |
| dV/dt rise (V/s) | 100 ± 30 (20) * | 149 ± 37 (20) | 1.8 ± 0.7 |
| dV/dt repolarization (V/s) | 32.5 ± 12.5 (20) * | 44 ± 11 (20) | 1.8 ± 0.9 |
Means ± SD with number of cells in parentheses; RN was calculated as RN = V/I, where V = voltage (mV) and I = current (pA). Current (I) was chosen to elicit a 10–20 mV hyperpolarization. RMP, resting membrane potential; AP 1/2 width, width of AP at point mid-way
between RMP and peak of AP; AP base width, width of AP at RMP;
* , significant difference between temperatures (P < 0.05, unpaired t-test). RT (room temperature) = 23 ± 1 °C.
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